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Matching Properties of Deep Sub-Micron MOS Transistors


Matching Properties of Deep Sub-Micron MOS Transistors


The Springer International Series in Engineering and Computer Science, Band 851

von: Jeroen A. Croon, Willy M Sansen, Herman E. Maes

CHF 177.00

Verlag: Springer
Format: PDF
Veröffentl.: 20.06.2006
ISBN/EAN: 9780387243139
Sprache: englisch
Anzahl Seiten: 208

Dieses eBook enthält ein Wasserzeichen.

Beschreibungen

<P><STRONG>Matching Properties of Deep Sub-Micron MOS Transistors</STRONG> examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:</P>
<P>A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.</P>
<P>The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. </P>
<P>The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. </P>
<P>The impact of process parameters on the matching properties is discussed. </P>
<P>The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. </P>
<P><STRONG>Matching Properties of Deep Sub-Micron MOS Transistors</STRONG> is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.</P>
<P>Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book.- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions.- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions.- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions.- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions.- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions.- Conclusions, Future Work and Outlook. Conclusions. Future work.- Outlook. </P>
Aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET Includes supplementary material: sn.pub/extras

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